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Articles you may be interested inInterface quality of Sc2O3 and Gd2O3 films based metal-insulator-silicon structures using Al, Pt, and Ti gates: Effect of buffer layers and scavenging electrodes J. Vac. Sci. Technol. B 31, 01A106 (2013); 10.1116/1.4768678Ultrathin ALD-Al2O3 layers for Ge(001) gate stacks: Local composition evolution and dielectric propertiesThe authors investigated an aluminum oxynitride buffer layer for Pr X O Y / Si metal-insulator-semiconductor stacks. The buffer layer limits unintentional interfacial layer formations and improves the electrical parameters as determined by combined electrical and spectroscopic characterization methods. These benefits are attributed to an interaction of the oxygen of the buffer layer with the Pr X O Y . As essential parameters for the improved performance of the buffer layer the authors find an O:N ratio of 1 and a thickness of 1 nm.

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