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The mass and heat transfer in an inductively heated Czochralski crystal growth furnace during a crystal growth process is investigated numerically for a germanium semiconductor. The RF coil position is fixed at all growth stages. The results show that the temperature and velocity fields are changed, and the convexity of the crystal-melt interface increases with the grown crystal length. The temperature difference in the melt is about 50-60 K and the melt at the bottom of the crucible is crystallized.

In this paper, a magnetic flux concentrator (MFC) is reported, and its geometry effect on the induction heating process has been calculated in a Czochralski crystal growth system using the 2D finite element method.

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