This paper presents a new type diode connected MOS transistor to improve CMOS conventional rectifier's performance in RF energy harvester systems for wireless sensor networks in which the circuits are designed in 0.18 μm TSMC CMOS technology. The proposed diode connected MOS transistor uses a new bulk connection which leads to reduction in the threshold voltage and leakage current; therefore, it contributes to increment of the rectifier's output voltage, output current, and efficiency when it is well important in the conventional CMOS rectifiers. The design technique for the rectifiers is explained and a matching network has been proposed to increase the sensitivity of the proposed rectifier. Five-stage rectifier with a matching network is proposed based on the optimization. The simulation results shows 18.2% improvement in the efficiency of the rectifier circuit and increase in sensitivity of RF energy harvester circuit. All circuits are designed in 0.18 μm TSMC CMOS technology.

The design strategy and efficiency optimization of UHF micro-power rectifiers using a novel diode connected MOS transistor is presented. The proposed diode connected MOS transistor uses a new bulk connection which leads to reduce the threshold voltage and leakage current in compare to conventional diode connected transistors. Using the proposed diode in typical rectifiers makes a significant improvement in output voltage and current therefore the efficiency is increased comparing to the same rectifier architectures using conventional diodes. Also a design procedure for efficiency optimization is presented and a superposition method is used to optimize the performance of multiple output rectifiers. Finally a five stage double output rectifier is designed based on the proposed optimization method. Simulation results verified the improvement in efficiency and area. All circuits are designed in a standard 0.18um CMOS Technology.

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