No abstract

Using the atom probe tomography, transmission electron microscopy, and ab initio calculations, we investigate the three-dimensional distributions of oxygen atoms segregating at the typical large-angle grain boundaries (GBs) (Σ3{111}, Σ9{221}, Σ9{114}, Σ9{111}/{115}, and Σ27{552}) in Czochralski-grown silicon ingots. Oxygen atoms with a covalent radius that is larger than half of the silicon's radius would segregate at bond-centered positions under tensile stresses above about 2 GPa, so as to attain a more stable bonding network by reducing the local stresses. The number of oxygen atoms segregating in a unit GB area NGB (in atoms/nm2) is hypothesized to be proportional to both the number of the tensilely-stressed positions in a unit boundary area nbc and the average concentration of oxygen atoms around the boundary [Oi] (in at. %) with NGB∼50nbc[Oi]. This indicates that the probability of oxygen atoms at the segregation positions would be, on average, fifty times larger than in bond-centered positions in defect-free regions.

Continuous hydrogen generation from water was realized for 110 h using an n-type GaN film with a NiO cocatalyst. This GaN–NiO photocatalyst exhibits incident photon-to-current conversion efficiencies of 70 and 57% at wavelengths of 300 and 350 nm, respectively. These results indicate that the GaN–NiO photocatalyst has high stability and efficiency for hydrogen generation.

Metal-insulator-semiconductor field-effect transistors (MISFETs) were fabricated on the (111)A surface of In 0:53 Ga 0:47 As for the first time. Al 2 O 3 gate dielectrics were formed by atomic layer deposition on sulfur-stabilized InGaAs surfaces. The MISFET on (111)A demonstrated channel mobility higher than that on (100), achieving more than 100% improvement with respect to Si even at a high surface carrier concentration.