Stretchable devices are expected to play a fundamental role in bioelectronics. Solution-processable conducting materials are desirable because of their low cost and fast device production. Herein, we report the fabrication...

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Ion-gated transistors are attracting significant attention due to their low operating voltage (<1 V) and modulation of charge carrier density by ion-gating media. Here we report flexible organic ion-gated transistors based on the high mobility donor–acceptor conjugated copolymer poly[4-(4,4-dihexadecyl 4H-cyclopenta[1,2-b:5,4-b′]-dithiophen-2-yl)-alt[1,2,5]thiadiazolo[3,4c]pyridine](PCDTPT) and the ionic liquid [1-ethyl-3 methylimidazolium bis(trifluoromethylsulfonyl)imide] as the ion-gating medium. Electrical characteristics of devices made on both [rigid (SiO2/Si) and flexible (polyimide (PI))] substrates showed very similar values of hole mobility (∼1 cm2 V−1 s−1) and ON–OFF ratio (∼105). Flexible ion-gated transistors showed good mechanical stability at different bending curvature radii and under repetitive bending cycles. The mobility of flexible ion-gated transistors remained almost unchanged upon bending. After 1000 bending cycles the mobility decreased by 20% of its initial value. Flexible photodetectors based on PCDTPT ion-gated transistors showed photosensitivity and photoresponsivity values of 0.4 and 93 AW−1.

Triphenylphosphine reduction of saturated endoperoxides derived from 6,6-dimethylfulvene and spiro[2.4]hepta-4,6-diene in the presence of nucleophiles results in the formation of products that mainly stem from deoxygenation followed by carbocation formation. Nucleophilic attack by solvent proceeds by an SN1 like mechanism; allyl shifts and cyclopropylcarbinyl-cyclobutyl rearrangements also occur. With the systems lacking carbocation-stabilizing groups, the deoxygenation step is preceded by attack of H2O at the phosphorus.