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In this work, perovskite solar cells (PSCs) based on Cs2AgBiBr6 with various electron transport layers and hole transport layers were modeled and analyzed. The device structure is FTO/ZnO/Cs2AgBiBr6/NiO/Au. PCE is practically saturated after the perovskite thickness of 700 nm. PCE declines from 21.88 % to 1.58 % when carrier lifetime decreases from 103 ns to 10−1 ns. Deep level defects at mid-band gap energy of the perovskite layer can trap both carriers, allowing greater carrier recombination. Carrier capture cross-sectional area greatly impacts on cell performance. When subjected to high temperatures (T), the carrier mobility would diminish because carrier scattering increases the cell resistance. That’s why raising T from 300 K to 400 K, the value of built-in potential (Vbi) decreases from 1.17 V to 0.98 V. Device shows maximum efficiency when FTO is used as the front electrode, and Au is used as a back electrode. The optimum device, made of ITO/ZnO/Cs2AgBiBr6/NiO/Au, provides Voc = 1.29 V, Jsc = 20.69 mA/cm2, FF = 81.72 %, and PCE = 21.88 %.