Summary
In this paper, a design of analog delay locked loop is introduced in which new techniques are applied to eventually increase operating frequency range and reduce jitter considerably. In this design, all blocks of a delay locked loop including a voltage controlled delay line, charge pump, and loop filter are accurately designed. A new delay cell is proposed with wide delay range, in which increase of delay range results in using fewer cells, and consequently the power consumption will decrease. Current mirror techniques and feedback in the proposed charge pump also cause higher current matching and better jitter performance. This delay locked loop, which is designed with TSMC 0.18‐μm CMOS technology, has a wide frequency range from 217 to 800 MHz. It consumes maximum 3.4‐mW and minimum 2.6‐mW power dissipation in source voltage of 1.8 V, which is suitable for low power applications. It also has an appropriate lock time that is at least equal to 3 clock cycles at 217 MHz and at most 25 clock cycles at 800 MHz. Jitter performance in this delay locked loop is improved significantly: RMS jitter is 0.65 ps at 800 MHz and 2.54 ps at 217 MHz. Moreover, its maximum peak‐to‐peak jitter is equal to 5.17 ps, and its minimum peak‐to‐peak jitter is equal to 1.39 ps at 217 and 800 MHz, respectively.
This paper discusses the design of a wideband class AB-C Doherty power amplifier suitable for 5G applications. Theoretical analysis of the output matching network is presented, focusing on the impact of the non-ideally infinite output impedance of the auxiliary amplifier in back off, due to the device’s parasitic elements. By properly accounting for this effect, the designed output matching network was able to follow the desired impedance trajectories across the 2.8 GHz to 3.6 GHz range (fractional bandwidth = 25%), with a good trade-off between efficiency and bandwidth. The Doherty power amplifier was designed with two 10 W packaged GaN HEMTs. The measurement results showed that it provided 43 dBm to 44.2 dBm saturated output power and 8 dB to 13.5 dB linear power gain over the entire band. The achieved drain efficiency was between 62% and 76.5% at saturation and between 44% and 56% at 6 dB of output power back-off.
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