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In recent years, high electron mobility transistors (HEMTs) have received extensive attention for their superior electron transport ensuring high speed and high power applications. HEMT devices are competing with and replacing traditional field-effect transistors (FETs) with excellent performance at high frequency, improved power density and satisfactory efficiency. This chapter provides readers with an overview of the performance of some popular and mostly used HEMT devices. The chapter proceeds with different structures of HEMT followed by working principle with graphical illustrations. Device performance is discussed based on existing literature including both analytical and numerical models. Furthermore, some notable latest research works on HEMT devices have been brought into attention followed by prediction of future trends. Comprehensive knowledge of up-to-date results, future directions, and their analysis methodology would be helpful in designing novel HEMT devices.

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