Using a unified representation for a class of the two current-feedback operational amplifier (CFOA) sinusoidal oscillators, new circuits of this type can be systematically discovered. A catalogue of two circuit structures, each structure realizing 18 oscillator circuits, is presented. Moreover, using the RC:CR transformation, additional 18 oscillator circuits can be obtained from each structure. A third structure realizing additional two oscillator circuits is also presented. Some of the circuits enjoy one or more of the following attractive features: use of grounded capacitors, feasibility of absorbing the parasitic components of the CFOAs, availability of a buffered output voltage and orthogonal tuning of the frequency and the startup condition of oscillation. Moreover, it is shown that the use of the Barkhausen criterion for the determination of the startup condition of oscillation and the frequency of oscillation yields inaccurate results with relatively large errors depending on the selected component values. Furthermore, it is shown that using the roots of the characteristic equation of a specific oscillator structure will result in a startup condition that cannot be adjusted without disturbing the frequency of oscillation.

A CMOS Gaussian/Triangular Basis functions computation circuit suitable for analog neural networks is proposed. The circuit can be configured to realize any of the two functions. The circuit can approximate these functions with relative root-mean-square error less than 1%. It is shown that the center, width, and peak amplitude of the dc transfer characteristic can be independently controlled. HSPICE simulation results using 0.18 m µ CMOS process model parameters of TSMC technology are included.

A CMOS Gaussian/Triangular Basis functions computation circuit suitable for analog neural networks is proposed. The circuit can be configured to realize any of the two functions. The circuit can approximate these functions with relative root-mean-square error less than 1%. It is shown that the center, width, and peak amplitude of the dc transfer characteristic can be independently controlled. SPICE simulation results using 0.18 μm CMOS process model parameters of TSMC18 technology are included.

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