Cupric Oxide (CuO) thin films were prepared by chemical spray pyrolysis (CSP) method at 400°C on glass and p-type Si substrate and then the films were annealed at 500°C and 600°C. The structural, optical and electrical properties of the thin films are measured. The analysis of X-ray diffraction (XRD) has confirmed amorphous phase mixed with polycrystalline features in the form of monoclinic structure. However, the polycrystalline CuO disappeared and changed to crystallite phase with increasing of annealing temperature. The values of bandgap energy (Eg) of the films were calculated using the absorbance data recorded by a spectrophotometer (UV-VIS). The calculated Eg using Tauc plot was about 2.45 eV which increased with increasing of annealing temperature. CuO thin films with high conductivity have been used to fabricate a hetrojunction solar cell of CuO/p-Si at 600°C which give Rs = 111Ω, Rsh = 7kΩ and a conversion efficiency of 1.24×10−4%.

In this work, Co doped copper oxide (II) thin films (COTF) were deposited by chemical spray pyrolysis method. Structural analyses have confirmed monoclinic polycrystalline for COTF deposited at 400 ºC substrate temperature. Compared with pure COTF, Co-doped samples showed larger grain size with distortion in the structure. With the increase of doping concentration the structure changes to amorphous. Bandgap energy was 2.45 eV before doping and 2.6 eV at 3% doping and began to decrease with increasing doping concentration. Activation energy was found to be 0.24 eV and it decrease with increase of doping. The Co (6%) doped-COTF are deposited on silicon substrate to fabricate CuO-Si hetero‫ـ‬ junction.

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