Thin films of zinc sulfide (ZnS) with various values of Zn ions concentrations (0.2,0.3,0.4

A series of MgxZn1-xO thin films were grown on glass substrates using modified chemical bath deposition (m-CBD) called successive ionic layer adsorption and reaction (SILAR) technique. The crystal structure, surface topography and the optical characterization of the prepared films were studied as a function of Mg/Zn (x) content. It is observed that the deposited films have polycrystalline structure in nature and grown in two phases Hexagonal and cubic. The preferential orientation of the films was absorbed along (002) plane. Structural parameter such as crystallite size, number of dislocation density and micro-strain were also investigated. The crystallite size and surface roughness are increased with the increase of Mg2+ ions content. Thus the results showed that the surface topography and the surface quality of the deposited films can be controlled by Mg2+ ions content. The optical transmittance spectra analysis showed that transmittance increase with the increase Mg2+ content to about 85% for x = 0.75, and the energy band gap increases (2.82 - 3.17) eV as the Mg2+ content increases x = (0.25 - 0.75). These results indicate that the MgxZn1-xO thin films can be potentially used in high-performance ultraviolet optoelectronic devices.

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In the present paper, MgxZn1-xO thin films were synthesized with a wide composition range x=(0.25, 0.5, 0.75) using a spray polyposis technique at 450 °C. The X-ray data analysis revealed that the films were polycrystalline with hexagonal and cubic structures. The preferential orientation of all films was absorbed along (002). Structural parameter such as average crystallite size, dislocation density and micro-striation were also investigated. AFM results show that the surface topography and the surface quality of the deposited thin film can be controlled by the Mg2+ content of MgxZn1-xO thin films. The UV-Visible analysis show that the optical absorption values decrease with the increase of Mg2+ concentration. It is observed that the band gap increases as the Mg2+ concentration increases. The reflectance spectra of MgxZn1-xO thin films shifted towards the lower wavelength with the increase of Mg2+ concentration. The extinction coefficient was slightly decreased and shifted towards higher energies with the increase of Mg2+ contents. These results demonstrate the high quality of single crystal MgxZn1-xO films and their potential in high-performance deep ultraviolet optoelectronic devices.