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18] Hofstetter R, Schmuck H, Heidemann R. Dispersion effects in optical millimeter-wave systems using self-heterodyne method for transport and generation. AbstractThis article presents an optimization technique aiming to improve gain and noise performances simultaneously, through the design of a cost-effective low noise amplifier (LNA) in a mixed-signal CMOS process without an RF triple-well option. To alleviate the inherent body-effect within a twin-well MOS transistor, we applied a transmission-line based source degeneration inductor Ls instead of a conventional spiral in the RF amplifier. In our design, without additional DC-power payment, the gain and noise figures (NF50) improved by 26% and 7.1%, respectively, when compared to the conventional spiral. The proposed LNA was implemented in a 0.18 mm 1-poly 6-metal mixed-signal CMOS process, and achieved a 13.1 dB gain and 2.72 dB noise figure while dissipating 8.76 mA from a 1.4 V supply.K E Y W O R D S low noise amplifier, radio-frequency, twin-well CMOS process

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60 nm tunneling FET (TFET) based low noise amplifier (LNA) with a sub-0.5 V supply voltage for 2.4 GHz WSN application has been evaluated systematically from device level up to circuit level design. With the help of TFET’s unique property of high subthreshold swing, it shows that substantial increase of gain performance was confirmed compared to that of conventional LNA using 60 nm bulk MOSFET at ultra-low voltage (ULV) condition. From the simulation study, TFET LNA at 0.4 V operating voltage has the gain of 15.1 dB and noise figure 50 of 3.5 dB while dissipating DC power consumption of 0.41 mW.