The article shows how constructive blocks interact to ensure the quality of services (QoS) and how they are used to create QoS quality methods. For this, we consider three standardized methods: the method of integrated services (IntServ), the method of differentiated services (DiffServ) The article may be useful both for learning how to use the system and for choosing the technology you need to use.
For a model electronic spectrum of a bcc crystal, characteristic s-surfaces are found that separate, in the quasimomentum space, pairs of electronic states potentially active in the generation of elastic waves at the stage of growth of a martensite crystal. Numerical estimation of the fraction of active electronic states (R eff /R) is performed for the energy range ∆ = 0.2 eV near the Fermi level. The ratio R eff /R is calculated as a function of the parameter ratio for the interaction between the nearest and the second neighbors for both bcc and fcc lattices.In the wave model of the growth of a martensite crystal [1] of the fcc-bcc (γ-α) type, the central part is played by the mechanism by which the waves of displacement of atoms by nonequilibrium 3d-electrons are generated. The key parameter is the number of pairs of inversely occupied electronic states which are able to effectively participate in the generation of phonons, R eff . The nonequilibrium character of the electronic subsystem in the interphase region at the stage of crystal growth under reconstructive martensitic transformations is set mainly by the chemical potential gradient ∇µ (we designate its direction by e). The pairs of electronic states potentially active in the generation of displacement waves possess the opposite signs of the nonequilibrium components ∆f of the Fermi electron distribution function. In the quasi-momentum space, these pairs of states are separated by s-surfaces on which the quantity ∆f proportional to the scalar product (v, ∇µ), where v is the group velocity of the electrons, vanishes.If the sections of the s-surfaces whose energies of states, ε, are in an acceptable (of the order of 0.1 eV) range of values of the deviations ∆ from the Fermi level µ are considerable in area, the number of pairs of inversely occupied electronic states able to effectively participate in the generation of phonons, R eff , will be great, and this will ensure the fulfillment of the condition for wave generationwhere σ 0 ~ (v, ∇µ) is the initial inverted population of states and σ th is their threshold inverted population.Clearly, for a known analytic form of the law of electron dispersion, ε(k), it is possible to determine the field of velocities v(k) = ∇ε k and then to find the s-surfaces that separate pairs of inversely occupied electronic states in the k-space. The goal of this work is to construct the s-surfaces typical of the tight-binding approximation for bcc crystals and to calculate the areas ∆S of sections of the s-surfaces (note that R eff ~ ∆S) for various values of µ and parameters of the interaction between the nearest and the second neighbors for both bcc and fcc lattices for a fixed electron energy range, ∆ ≈ 0.2 eV, near the Fermi level.
The possibilities of implementing of a project to adapt the buildings and structures of the former military campus No. 19 in Irkutsk for the needs of the Suvorov Military School are examined in the article. The author proposes a set of specific architectural and planning solutions. The principle of compact development and rigid functional zoning has been the basis for the proposed project. Recommendations for accommodation of the personnel, arrangement of the residential and educational premises, taking into account age-related characteristics and relevant legislative norms and requirements are given.
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