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Binding energy of charged exciton is investigated in a GaAs/GaAlAs double quantum well system in the presence of magnetic and electric field applied in the z direction. Calculations have been carried out with the variational technique within the single band effective mass approximations using a two parametric trial wave function. The photoionization cross section for a charged exciton placed at the centre of quantum well is computed as a function of normalized photon energy in the presence of magnetic and electric field strengths. The interband emission energy as a function of well width is calculated. The dependence of the photoionization cross section on photon energy is carried out for the charged excitons. The resulting spectra are brought out for light polarized along and perpendicular to the growth direction. The results show that the charged exciton binding energy, interband emission energy and the photoionization cross section depend strongly on the well width. Our results are compared with the other existing literature available.