Single-photons are key elements of many future quantum technologies, be it for the realisation of large-scale quantum communication networks 1 for quantum simulation of chemical and physical processes 2 or for connecting quantum memories in a quantum computer 3 . Scaling quantum technologies will thus require efficient, on-demand, sources of highly indistinguishable single-photons 4 . Semiconductor quantum dots inserted in photonic structures are ultrabright single photon sources [5][6][7] , but the photon indistinguishability is limited by charge noise induced by nearby surfaces 8 . The current state of the art for indistinguishability are parametric down conversion single-photon sources, but they intrinsically generate multiphoton events and hence must be operated at very low brightness to maintain high single photon purity 9,10 . To date, no technology has proven to be capable of providing a source that simultaneously generates near-unity indistinguishability and pure single-photons with high brightness. Here, we report on such devices made of quantum dots in electrically controlled cavity structures. We demonstrate on-demand, bright and ultra-pure single photon generation. Application of an electrical bias on deterministically fabricated devices 11,12 is shown to fully cancel charge noise effects. Under resonant excitation, an indistinguishability of 0.9956±0.0045 is evidenced with a g (2) (0)=0.0028±0.0012. The photon extraction of 65% and measured brightness of 0.154±0.015 make this source 20 times brighter than any source of equal quality. This new generation of sources open the way to a new level of complexity and scalability in optical quantum manipulation.

Electro-optic modulators have been identifi ed as the key drivers for optical communication and signal processing. With an ongoing miniaturization of photonic circuitries, an outstanding aim is to demonstrate an on-chip, ultra-compact, electro-optic modulator without sacrifi cing bandwidth and modulation strength. While silicon-based electro-optic modulators have been demonstrated, they require large device footprints of the order of millimeters as a result of weak non-linear electro-optical properties. The modulation strength can be increased by deploying a high-Q resonator, however with the trade-off of signifi cantly sacrifi cing bandwidth. Furthermore, design challenges and temperature tuning limit the deployment of such resonance-based modulators. Recently, novel materials like graphene have been investigated for electro-optic modulation applications with a 0.1 dB per micrometer modulation strength, while showing an improvement over pure silicon devices, this design still requires device lengths of tens of micrometers due to the ineffi cient overlap between the thin graphene layer, and the optical mode of the silicon waveguide. Here we experimentally demonstrate an ultra-compact, silicon-based, electro-optic modulator with a record-high 1 dB per micrometer extinction ratio over a wide bandwidth range of 1 μm in ambient conditions. The device is based on a plasmonic metal-oxide-semiconductor (MOS) waveguide, which efficiently concentrates the optical modes ' electric fi eld into a nanometer thin region comprised of an absorption coefficient-tuneable indium-tin-oxide (ITO) layer. The modulation mechanism originates from electrically changing the free carrier concentration of the ITO layer which dramatically increases the loss of this MOS mode. The seamless integration of such a strong optical beam modulation into an existing silicon-on-insulator platform bears signifi cant potential towards broadband, compact and effi cient communication links and circuits.Keywords: Modulator; silicon-on-insulator; ultra-compact.A waveguide-integrated electro-optical modulator can be perceived as a transistor with an optical source and drain and an electrical gate [1]. This waveguide receiving a continuous wave laser beam converts electrical data arriving at the gate electrode into an optical encoded data stream. A widely used modulation mechanism is to change the free carrier concentration of the material overlapping with the propagating optical mode, which leads to a shift of the plasma frequency of the dispersion relation [2]. This modifi es both the real and imaginary parts of the refractive index of the material, and henceforth alters the index and loss of the optical propagating mode. While a Mach-Zehnder type modulator utilized a refractive index change in the real part [3], an electro-absorption type modulator deploys the altered loss of the optical mode [4]. With the promise of silicon-on-insulator (SOI) technology [5] for on-chip integrated photonics, the Intel team demonstrated a Mach-Zehnder modulator by c...

We demonstrated that ultraviolet Raman spectroscopy is an effective technique to measure the transition temperature ( T c ) in ferroelectric ultrathin films and superlattices. We showed that one-unit-cell-thick BaTiO 3 layers in BaTiO 3 /SrTiO 3 superlattices are not only ferroelectric (with T c as high as 250 kelvin) but also polarize the quantum paraelectric SrTiO 3 layers adjacent to them. T c was tuned by ∼500 kelvin by varying the thicknesses of the BaTiO 3 and SrTiO 3 layers, revealing the essential roles of electrical and mechanical boundary conditions for nanoscale ferroelectricity.