The nanocrystalline samples of 10wt.%Scandia stabilized Zirconia (10ScSZ) and 1wt.%Ceria doped ScSZ (1Ce10ScSZ) prepared via co-precipitation route were characterized and compared to commercially available samples regarding their transport properties and electrical conductivity. The results of oxygen isotope experiments show that for Zirconia-based electrolytes, the rate of heteroexchange is lower than that for Samaria-doped Ceria. The results of Secondary Ions Mass Spectrometry (SIMS) indicate that all admixed components are present both in the surface layer and the bulk of the studied samples with pronounced segregation on the grain boundary. The highest total conductivity is observed for DKKK sample. In the range of 600-400°C the highest conductivity observed for synthesized nanocrystalline 1Ce10ScSZ sample is explained by the effect of segregated Scandia doped Ceria surface layers.
SSZ-based ceramics were obtained by sintering of nanopowders derived at room temperature by mechanochemical synthesis from refined technical grade ZrO2 nano-precursors. RT-treatment by 2.5 MeV electrons up to 1563 K was used for the modification of ceramics. Powders and ceramics were characterized by XRD, Raman, SEM and EDS, TEM, SIMS techniques. The phase composition of Zr0.89Sc0.1Ce0.01O1.95 ceramics was very close to cubic structure but better fitting of XRD patterns was obtained for rhombohedral lattice. Conductivity of solid electrolytes for IT SOFC was studied by complex impedance method. To stabilize cubic structure and increase conductivity at operation temperature of To ∼ 1000 K, the composition of SSZ solid electrolyte was optimized by addition of yttria and sintering aids. The interaction of admixtures with minor dopants leading to intergrain phase was revealed. During fast sintering, ceramics keep a memory about inhomogeneous disordered solid solutions in a form of nanostructuring. Conductivity data indicate nanostructuring of ceramics too: activation energies of bulk and grain boundary conductivities are close (Eb ∼ 0.9 eV, Egb ∼ 1.05 eV). Annealing of ceramics at high temperatures increases conductivity at To and promotes grain growth.
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