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Investigation of auto-oscillation currents in compensated silicon doped with impurity atoms of manganese, zinc, sulphur or selenium can observe several types of current instabilities with different natures and excitation conditions. The boundary regions of auto-oscillation currents such as temperature instabilities, recombination waves and injection instabilities in temperature, electric field, intensity of illumination as well as in resistivity and conductivity type of compensated silicon samples were determined. From the analysis of the obtained results the possibility of using the detected auto-oscillation currents in compensated silicon for creating solid-state generators and sensors of physical quantities is shown. The mechanism of manganese diffusion into silicon leading to the formation of higher manganese silicides on the silicon surface was determined. The X-ray analysis data allowed to find that in the temperature range of thermal annealing T=800÷1100°C, polycrystalline films corresponding to the phases of higher manganese silicides are formed. The possibility of creating the efficient thermopiles based on the obtained structures of the MnxSi1-x -Si-MnxSi1-x type based on silicon, the operating parameters of which are not inferior to existing thermopiles, and sometimes have certain advantages, is shown.

Large-scale application of solar power in all areas of the economy is mainly determined by the efficiency, reliability, and cost factors of solar cells. Currently, solar cells based on silicon have exhausted their peak capacity, the efficiency ratio of such elements is believed to hit 20%. Silicongermanium solid solutions are widely used in electronics and especially in nanoscale electronics technology. The unique properties of this material make it possible to create devices with parameters superior to those manufactured on the basis of A III B V compounds. It is known that solid solutions of Si 1-x Ge x is mainly produced by liquid-phase epitaxy or during cultivation. However, the above techniques barely allow to obtain solid solution on the crystal surface with desired thickness and composition. Neither allows it to engineer nanoscale structures on the basis of germanium in the silicon lattice.

The formation of clusters of impurity atoms in the crystal lattice of semiconductor materials is of great interest. The formation of nanoclusters with controlled parameters in the lattice of semiconductor materials can serve as the basis for the technology of creating and obtaining bulk nanostructured semiconductor material. This paper shows the experimental results obtained, as well as the proposed physical model of the structure of nickel atomic clusters. It is shown that the clusters move and migrate in the crystal lattice of monosilicon with an anomalously high diffusion coefficient of about c (D ~ 10 -9 cm 2 /s at T = 800°C). The structural composition of clusters of impurity atoms is determined, its structure and the mechanism of migration in the crystal lattice are proposed. Thus, it was found that it is possible to control the state of impurity atom clusters in the silicon crystal lattice, obtaining a new type of semiconductor materials with unique functional and properties using the cluster migration process. This makes it possible to create a new class of photonic materials with bulk superlattices based on semiconductors with ordered clusters, which has unique functionality for creating optoelectronic, nanoelectronic, photoelectric devices and sensors of physical quantities of a new generation.

This chapter provides the rationale for monitoring photovoltaic (photovoltaic) systems, its purpose, the need for proper measurement, and the frequency required to obtain meaningful results. The need for system monitoring falls into three groups: user feedback, performance review, and system evaluation. Each group is briefly summarized; other related topics include calibration, data storage, and data transfer. The text covers various monitoring modes such as performance testing, system evaluation, data collection and storage, as well as data analysis and reporting. The evaluation standards given by the International Electrotechnical Commission (IEC) are noted in the Data Analysis and Reporting section. The figures are provided to illustrate several types of displays that are an integral part of monitoring. Optimized modes of operation of the power part of a household photovoltaic system consisting of photovoltaic panels, an MRRT controller, an inverter and an electric energy storage unit, with Autonomous and network connection of the load. To build an optimal and cost-effective energy management strategy, it is necessary to take into account the energy profile of the resident, the characteristics of electricity production based on photovoltaic cells, and the electricity tariff for utilities. A photovoltaic system can be connected to the grid in order to receive energy from the grid or enter it into the network to eliminate the discrepancy between the generated, consumed and stored energy.