No abstract

No abstract

Undoped p-CdTe bulk crystals were grown'by the vertical Bridgman method from a slightly Cd-rich meit. The crystals were characterized by x-ray diffraction and topography, capacitance-voltage and low-temperature photoluminescence (PL) measurements. The compensation conditions ofThe as-grown p-CdTe monocrystalline wafers were short-time annealed i n liquid Ga to create a donor-doped layer. To distinguish t h e role of Ga. the same annealing was done in Cd vapour and in a vacuum. The PL spectra at 4.2 K over all the volume of the annealed wafers have been studied. The changes of PL lines were connected with the interaction between Ga dopant and the native structural defects and residual impurities. cm-3 were obtained for the as-grown crystals.

No abstract

No abstract