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The paper presents the results of a study of the photoconductivity of p+−p−p− structures of CdxHg1–xTe (0.24 ≤ x ≤ 0.29) single crystals obtained by thermal diffusion of copper at T = 130°C. The long-term relaxation (LR) of photoconductivity with a duration of up to 10 ms in the presence of a thermal background of intensity Φ = 1016−1017 cm−2·s−1 is observed for the first time in narrow-gap materials in the T = 77–150 K range. Recombination, diffusion-drift processes in the sample are analyzed, which cause LR and spectral features of photoconductivity. The obtained structures are promising for the development of various highly sensitive IR detectors with an elevated operating temperature.

The results of current–voltage (I–V) and capacity–voltage (C–V) characterization and study of kinetics of photocurrent relaxation in Al–p-Cd x Hg1-x Te structures with tunnel thin insulating layer at 80 K are presented. All observed qualitative peculiarities are well explained by a simple model, taking into account the relative contribution of recombination of the photogenerated charge carriers and their tunneling through dielectric gap at reverse bias voltage. It is established that the studied structures are suitable for IR-system applications.

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The design and manufacturing technology of high-quality CdxHg1−xTe n+−n−p−p+-type mesaphotodiodes ∅ 300 μm for the spectral range of 3–5 μm are presented. The features of the design and technology as well as the main characteristics of the manufactured photodiodes are presented. It is shown that the use of a semitransparent nickel layer 5 nm thick deposited on the surface of the n+ layer makes it possible to reduce the series resistance Rser to 1–2 Ohm and the response time to 10−11 s.