This paper presents physical and electrical characterizations of fabricated ultrathin titanium passive devices embedded in silicon dioxide. The nanowires and Ti/TiO 2 /Ti metal-insulator-metal capacitors are fabricated with a flexible process based on a nanodamascene technology. A model of the titanium resistivity versus thickness based on experimental data is proposed. The combination of the nanodamascene technology and resistance modeling allows the realization of ultrathin titanium passive devices with variable geometries and/or material through a tailored chemical mechanical planarization.