Spintronics is the new emerging field that recasts the modern information technology using electron spin along with its charge. Various spintronic devices have been under research for the last few years such as GMR based devices, MRAMs, etc. These devices are based on the conventional ferromagnetic materials that exhibit spin asymmetry. Half metallic ferromagnetic materials, especially Heusler alloys, are considered as most promising candidates because of high spin polarization. Previously, Heusler alloys have been investigated theoretically. Few experimental reports are available that belong to high-cost vacuum-based methods. Furthermore, detailed magnetic study at room temperature is rare to be found. In this research work, structural, electronic and magnetic properties of Co2MnSn Full Heusler alloy are investigated experimentally and through density functional theory by ADF. Theoretical results of this study predict the half metallic and asymmetric behavior of the Co2MnSn Full Heusler alloy with L21 structure. The cobalt manganese tin thin films are prepared by the electrodeposition method by varying applied reducing potential from 1 to 2V. Mixed phases are observed at an applied potential ranging from 1V to 1.5V. Co2MnSn phase of full Heusler alloy is observed at an applied voltage of 1.75V. Further increase in applied voltage to 2V results in strengthening and stability of Co2MnSn phase. Magnetic moment B of 4.10 is in close agreement to the one calculated by Slater-Pauling Rule for full Heusler alloys. The M-H loops of cobalt manganese tin Heusler alloy electrodeposited thin films exhibit soft ferromagnetic behavior. Arrott plots show the ferromagnetic nature of cobalt manganese tin electrodeposited thin films by exhibiting convex shape. MH curves show variation in exchange bias with varying the applied potential.