Review of radiation damage in GaN-based materials and devices J. Vac. Sci. Technol. A 31, 050801 (2013) Type-II InAs/GaSb strained layer superlattices grown on GaSb (111)B substrate J. Vac. Sci. Technol. B 31, 03C123 (2013) Polarity control and transport properties of Mg-doped (0001) InN by plasma-assisted molecular beam epitaxy J. Vac. Sci. Technol. A 31, 031504 (2013) Growth and characterization of GaP/GaNP core/shell nanowires J.The authors report the simultaneous formation and transfer of GaAsN nanostructure layers to alternative substrates, a process termed "ion-cut synthesis." Ion-cut synthesis is induced by nitrogen ion implantation into GaAs (GaAs:N), followed by spin-on-glass (SOG) mediated wafer bonding and high temperature rapid thermal annealing (RTA). Due to the low ion-matrix diffusivity of GaAs:N, RTA induces the formation of both nanostructures and gas bubbles. The gas bubble pressure induces the formation and propagation of cracks, resulting in transfer of the nanostructured layer. The authors discuss the critical role of the physical properties and the thicknesses of the substrates and the SOG layer to the achievement of ion-cut synthesis.