The dielectric and impedance spectra of TlGaSe2 crystals have been studied at temperatures in the 100–500 K range in the alternating current (AC [Formula: see text]1 V). It has been shown that the conductivity of TlGaSe2 crystals is mainly an ionic characteristic at temperatures above 400 K. The well-defined peak at the frequency dependence of the imaginary part of impedance [Formula: see text] is observed in the 215–500 K temperature range. In a constant field, there occurs a significant decrease in electrical conductivity [Formula: see text] in due course. The ionic contribution to conductivity (76% at [Formula: see text]) has been estimated from a kinetic change in electrical conductivity [Formula: see text] under the influence of a constant electric field. The diagram analysis in a complex plane [Formula: see text] has been conducted by applying the method of an equivalent circuit of the substation. It has been determined that the average relaxation time of the electric module of the sample is [Formula: see text].

In this work, the dielectric and electrical properties of TlInS2 crystal have been studied in the temperature range of 300–550 K before and after being implanted with H[Formula: see text] ion. The dielectric parameters such as the real and imaginary parts of permittivity, impedance and dielectric loss have been investigated in this temperature range. The role of free ions in the relaxation process when f [Formula: see text] 10 kHz on the basis of the study of dielectric parameters in the frequency range of 25–106 Hz has been determined. It has been observed that the interdependencies of the real and imaginary parts of dielectric permittivity go beyond the standard.

In the presented work, the charge state of P(VDF-TeFE)/Si-based composites obtained on the basis of nano-Si with a size of 50[Formula: see text]nm and micro-Si particles with a size of 50[Formula: see text][Formula: see text]m and P(VDF-TeFE) copolymer of polyvinylidenefluoride with tetrafluoroethylene from polar polymers, was investigated, the amount of filler and the effect of ionizing radiation on these properties were studied. It has been shown that the observed differences in the charge state parameters of P(VDF-TeFE)/Si composites obtained with nano- and micro-sized Si are due to the higher concentration of nanoparticles and, accordingly, the effective surface area in the composites obtained with nanosized Si, and the change in the mobility of relaxors due to the effects of construction and destruction processes that occur in the polymer matrix and at the interphase boundary after the effect of gamma radiation. The reason for the observed changes in the depolarization processes of polarized P(VDF-TeFE)/nano-Si composites after gamma radiation is the change in the ratio between the construction and destruction processes in the system.