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A conductive pyrolytic carbon fiber (CF) has been found to serve as an alternative material to metal electrodes, since it forms an Ohmic contact to CdS crystals. The methods of preparation of polycrystalline layers and nanocrystalline arrays of CdS are described that allow formation of an ohmic or quasi-ohmic contact to CF. It is shown that the ohmic contact between the CF and polycrystalline CdS layer is stable for at least several months and its exploitation characteristics are not worse than the indium contact. Advantages of the CF electrode, such as thermostability to extremely high temperatures and low cost are discussed.CdS nanowire arrays grown on a carbon fiber.

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Visualization of functionally different domains in bulk heterojunction (BHJ) solar cells is of paramount importance to understand the routes of optimization of their structure for best performance. In this work, a concept of detecting n-type and p-type semiconductor domains in BHJ structures by methods based on atomic force microscopy (AFM) is proposed. It assigns an active role to the semiconducting coating of the AFM probe tip which is able to form different junctions, i.e., p-n anisotype or p+-p, n+-n isotype, with the surfaces inspected. Here, we illustrate this concept on the example of BHJ structures composed of the n-type inorganic microcrystalline semiconductor CdS and mechanochemically prepared p-type kesterite nanopowder and two types of AFM probe tip coatings, i.e., p-type boron-doped diamond and n-type nitrogen-doped diamond coating, respectively. Conductive AFM (CAFM) measurements demonstrated unequivocally the different diode behavior when contacting n- or p-type semiconductor domains in the BHJ structures. Simulation of the energy level alignment at the probe-sample interfaces allowed us to explain the formation of anisotype or isotype junctions depending on the sample domain and probe used. Kelvin probe force microscopy measurements were consistent with the CAFM results and indicated the different contact potentials from the diverse types of domains in the BHJ structure.

The effect of Sm3+ and/or Ho3+ doping on structural and luminescent properties of screen-printed ZnO films sintered at 1000°C was investigated by photoluminescence (PL), PL excitation and Raman scattering methods. For all the films, ultraviolet excitonic and visible defect-related PL bands of ZnO were detected. The doping with Ho3+ ions produced an enhancement of PL in ZnO films, the excitonic PL intensity being increased prominently, while the co-doping with Sm3+ and Ho3+ ions resulted in PL decrease in ZnO films. Only for (Sm,Ho)- co-doped ZnO films, the rare-earth PL bands were detected. The reduction of Sm3+ to Sm2+ was observed demonstrating 5D0→7FJ radiative transitions. The mechanism of PL and PL excitation is discussed in terms of the formation of rare-earth complexes as well as energy transfer towards them from ZnO host.