In the present study, pure and [Formula: see text]-cystine (LC) doped zinc thiourea sulphate (ZTS) crystals have been grown by slow evaporation solution technique at ambient temperature. The powder X-ray diffraction (XRD) analysis has been carried out to identify the shifts in peak positions and structural parameters of grown crystals. The incorporation of LC in ZTS crystal has been qualitatively analyzed by means of Fourier transform infrared (FTIR) spectroscopic study. In UV-visible studies, the influence of LC on optical transparency, bandgap and various optical constants of ZTS crystal have been investigated to explore various optical applications. The thermal stability of LC doped ZTS crystal has been determined by means of differential scanning calorimetry (DSC) analysis. The hardness behavior and hardness number of grown crystals have been comparatively evaluated by employing the Vicker’s microhardness test. The dielectric study of pure and LC doped ZTS crystal has been carried out at different temperature. In Kurtz–Perry powder technique, the second harmonic generation (SHG) efficiency of LC doped ZTS crystal is found to be 1.16 times that of ZTS crystal.

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A glycine doped bis-thiourea cadmium formate (BTCF) crystal has been grown by a slow solution evaporation technique. The shifts in vibrational frequencies of different functional groups of BTCF were identified by Fourier transform infrared (FT-IR) spectral analysis. UVvisible studies were employed to assess the optical transparency of pure and doped BTCF crystals. The optical band gap of doped BTCF is found to be 5.16 eV. The optical constants, refractive index, reflectance, and optical conductivity have been evaluated, using the transmission data. The dielectric characteristics of pure and doped BTCF were investigated by employing dielectric studies. The decomposition temperature of pure and doped BTCF crystals was determined by using thermogravimetric analysis. The encouraging third-order nonlinear optical properties of pure and doped BTCF crystals were examined by employing the Z-scan technique at 632.8 nm.

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