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Pellets of ceramic, Na 1-x K x NbO 3 (x = 0, 0⋅ ⋅2 and 0⋅ ⋅5), were prepared by conventional solid-state reaction method. Prepared samples were characterized using XRD and SEM. The frequency and temperature variation of dielectric constant, loss tangent and dielectric conductivity of prepared samples were measured in the frequency range from 10 KHz-1 MHz, and in the temperature range from 50-250°C for x = 0⋅ ⋅2 and 0⋅ ⋅5, and between 50 and 480°C for x = 0 compositions. It was observed that the dielectric constant and loss tangent decrease, and conductivity increases with increasing frequency. Near the transition temperature the material shows anomalous behaviour for the observed properties, and the peaks of dielectric constant and loss tangent were observed shifting towards lower temperature with increasing frequency.

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In this work, pellet samples of (Ba1−xCaxZr0.1Ti0.9)O3, (0.140 ≤ x ≤ 0.160) were prepared using solid-state reaction route with double sintering. The dielectric and structural properties of the prepared samples were measured, from room temperature to 250 °C, at different frequencies, in the range 10–1000 KHz. A peak shifting anomaly in the X-ray diffraction peaks patterns, an anomalous change in the slope of c/a vs x plot, and the observed minimum values of dielectric constant, loss and conductivity of the prepared compositions show a strong compositional dependent dielectric and structural properties, indicating a morphotropic phase transition type behavior, at the composition with x = 0.150.

Scanning magnetron-sputtered titanium nitride (TiN) films were deposited onto silicon substrates under varying nitrogen and argon pressures. Golden TiN films with (220) orientation were deposited at different substrate bias voltages (0to−120V). Auger electron spectroscopy measurements show N∕Ti ratio between 1.18 and 1.07, and oxygen content between 11% and 5% in the as-deposited TiN film samples. Dependence of the stress and grain size on substrate bias voltage and dependence of resistivity on bias voltage and annealing temperature have been studied for the deposited TiN films. Resistivity was found minimum for the TiN samples deposited at −40V bias, which decreases from 320to132μΩcm on annealing, up to 750°C. Copper was sputter deposited on the as-grown TiN films deposited at −40V bias. The Cu∕TiN∕Si samples were annealed at different temperatures. Resistivity, x-ray diffraction, scanning electron microscopy, and energy dispersive x-ray analysis results of the Cu∕TiN∕Si structure are consistent with each other, and show that scanning magnetron sputtering deposited TiN film is a good diffusion barrier for copper metallization of the silicon devices, up to 750°C.