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A theory has been developed to determine solar cell design parameters in the conventional solar cell equation using measured cell Isc, Imp, Vmp and Voc. The theory overcomes the problem of series resistance becoming negative. It is shown that the diode factor a indeed depends upon cell temperature. The theoretical predictions are in good agreement with experimental observations.

An analytical approach to determine the solar cell series resistance (Rs), dark saturation current due to diffusion of charge carriers (I01), and dark saturation current due to generation/recombination of charge carriers in the space charge region (I02), from the double-diode solar cell equation is presented. The theory uses the measured Isc, Voc, Vmp and Imp data of the cell. The results confirm that the diffusion process dominates charge transport at high forward bias voltages of the cell, whilst the generation/recombination process dominates charge transport at low forward bias voltages. Theoretical and experimental I-V characteristics match within +or-2%, which confirms the adequacy of the theory.

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