An edge-coupled high-speed photodiode based on strained InGaAs quantum wells for detection at 2000nm is demonstrated. The fabricated device shows a leakage current as low as 120nA at −3V bias voltage and a responsivity of around 0.3A/W at 2000nm. The high-speed butterfly packaging of the device is presented which shows a 3dB bandwidth of more than 10GHz. The device shows similar highspeed performance at 1550nm.

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Quantum well intermixing in 2μm emitting structures is presented for the first time. A photoluminescence and electroluminescence differential shift of 160nm is achieved between SiNx and SiO2 capped regions demonstrating potential for monolithic integration.