Three-dimensional Dirac semimetal Cd3As2, hosting a pair of Dirac cones and Fermi-arc-like surface states, displays numerous exotic properties in transport experiments. Particularly, when proximitized with superconductors, Cd3As2 is expected to realize topological superconductivity and Majorana zero modes, which are elemental for fault-tolerant quantum computing. Implementing electronic transport measurements on superconductor Al-Cd3As2 nanoplate-Al heterostructures, here we investigate the effect of gate modulation and magnetic field on superconducting properties of Cd3As2. A proximity-induced superconducting state is well achieved in the junction which can be effectively tuned by gate voltage. The critical current oscillations under out-of-plane magnetic fields are well fitted with the Fraunhofer function. The critical supercurrent shows a slower decay as the gate voltage is tuned to negative under in-plane magnetic fields, which may arise from the enhanced contribution of surface states. An anisotropic superconductivity is also observed when in-plane rotating magnetic fields. Our results report the gate modulation of supercurrents in different magnetic field directions, which should be valuable for further exploring the topological superconductivity in Dirac semimetals.

Dirac semimetals are promising materials for broadband and fast photodetection due to their gapless nature. Dirac heterostructures consisting of 2D Dirac semimetal graphene and its 3D analogue Cd3As2 should take the ascendency of high carrier mobility in both materials, while overcome the limitation of weak optical absorption in graphene-based devices and suppress the dark current occurring in pure Cd3As2 photodetectors. Herein, we report high-performance photodetectors based on a 3D Dirac semimetal Cd3As2/monolayer graphene heterostructure, which show broadband photoresponse from visible (488 nm) to mid-infrared (10 μm) wavelength region at room temperature without an external bias. The photodetectors are with a maximum responsivity of 0.34 mA/W at 488 nm and a fast response speed of ∼13 μs. In addition, the photoresponse can be enhanced by a gate voltage even in a long wavelength region. Our work suggests that the combination of the graphene and 3D Dirac semimetal is promising for high-performance photodetectors with broadband detection, high sensitivity, and rapid response.

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