No abstract

In the last decades, the conductive polymer PEDOT:PSS has been introduced in Si-based hybrid solar cells, gaining noticeable research interest and being considered a promising candidate for next generation solar cells which can achieve both of low manufacturing cost and high power conversion efficiency. This study succeeded in improving the electrical conductivity of PEDOT:PSS to 937 S/cm through a simple process of adding hydroquinone (HQ) to the pristine PEDOT:PSS solution. The results also showed that the addition of HQ to PEDOT:PSS(HQ-PEDOT:PSS) could not only dramatically improve the conductivity but also well-sustain the work function characteristics of PEDOT:PSS by promoting the formation of more continuous conductive-PEDOT channels without removing the insulating PSS. In this report, we reveal that the application of the HQ-PEDOT:PSS to the Si/PEDOT:PSS HSC could significantly improve the short-circuit current and open-circuit voltage characteristics to increase the power conversion efficiency of the HSCs compared to the conventional approaches. Moreover, we also treated the Si surface with the organic monomer, benzoquinone (BQ) to (1) passivate the excess Si surface defect states and (2) to improve the properties of the Si/PEDOT:PSS interface. We show that BQ treatment is able to dramatically increase the minority carrier lifetime induced by effective chemical and field-effect passivation in addition to enhancing the wettability of the Si surface with the PEDOT:PSS solution. As a result, the power conversion efficiency was increased by 10.6% by introducing HQ and BQ into the fabrication process of the Si/PEDOT:PSS HSC.

In recent decades, dopant-free Si-based solar cells with a transition metal oxide layer have gained noticeable research interest as promising candidates for next-generation solar cells with both low manufacturing cost and high power conversion efficiency. Here, we report the effect of the substrate temperature for the deposition of vanadium oxide (V2O5−x, 0 ≤ X ≤ 5) thin films (TFs) for enhanced Si surface passivation. The effectiveness of SiOx formation at the Si/V2O5−x interface for Si surface passivation was investigated by comparing the results of minority carrier lifetime measurements, X-ray photoelectron spectroscopy, and atomic force microscopy. We successfully demonstrated that the deposition temperature of V2O5−x has a decisive effect on the surface passivation performance. The results confirmed that the aspect ratio of the V2O5−x islands that are initially deposited is a crucial factor to facilitate the transport of oxygen atoms originating from the V2O5−x being deposited to the Si surface. In addition, the stoichiometry of V2O5−x TFs can be notably altered by substrate temperature during deposition. As a result, experimentation with the fabricated Si/V2O5−x heterojunction solar cells confirmed that the power conversion efficiency is the highest at a V2O5−x deposition temperature of 75 °C.

In this report, we present a process for the fabrication and tapering of a silicon (Si) nanopillar (NP) array on a large Si surface area wafer (2-inch diameter) to provide enhanced light harvesting for Si solar cell application. From our N,N-dimethyl-formamide (DMF) solvent-controlled spin-coating method, silica nanosphere (SNS in 310 nm diameter) coating on the Si surface was demonstrated successfully with improved monolayer coverage (>95%) and uniformity. After combining this method with a reactive ion etching (RIE) technique, a high-density Si NP array was produced, and we revealed that controlled tapering of Si NPs could be achieved after introducing a two-step RIE process using (1) CHF3/Ar gases for SNS selective etching over Si and (2) Cl2 gas for Si vertical etching. From our experimental and computational study, we show that an effectively tapered Si NP (i.e., an Si nanotip (NT)) structure could offer a highly effective omnidirectional and broadband antireflection effect for high-efficiency Si solar cell application.

No abstract