International audienceUsing the conventional rate equations describing an injection-locked system, a novel modulation response function is derived, which implicitly incorporates nonlinear gain through the free-running relaxation oscillation frequency and damping rate of the slave laser. In this paper, it is shown that the model presented can be used to extract the characteristic parameters of the coupled system from experimental data. The number of fitting parameters in the model is reduced by determining the fundamental slave parameters through the conventional free-running response function; these parameters are considered to be constant during the curve-fitting of the injection-locked system. Furthermore, in order to reduce the number of possible solutions generated during the least-squares-fitting process, the remaining fitting parameters are tightly constrained based on the physical limits of the coupled system. By reducing the number of unknown fitting parameters and constraining the remaining terms, a stronger confidence in the extracted parameters is achieved. Using a series of response curves measured from an injection-locked quantum dash laser, characteristic parameters of the system are extracted and validity of the model is examined. The verified model is used to analyze the impact of the linewidth enhancement factor on the characteristics of the response function in the microwave domain
A dual-wavelength emission source is realized by asymmetrically pumping a two-section quantum-dot distributed feedback laser. It is found that under asymmetric bias conditions, the powers between the ground-state and excited-state modes of the two-section device can be equalized, which is mainly attributed to the unique carrier dynamics of the quantum-dot gain medium. As a result, a two-color emission with an 8-THz frequency difference is realized that has potential as a compact THz source. It is also shown that the combination of significant inhomogeneous broadening and excited-state coupled mode operation allows the manipulation of the quantum-dot states through external optical stabilization.
International audienceThis paper investigates the modulation properties of self-injected quantum-dot semiconductor lasers. Using a semianalytical approach, the modulation characteristic of a quantumdot nanostructure laser operating under the influence of optical feedback is successfully modeled. This novel approach derives a feedback induced modulation response model based on the incorporation of the specific quantum nanostructure carrier dynamics as well as the effects of nonlinear gain. This work investigates the impacts of the carrier capture and relaxation time as well as other material parameters such as linewidth enhancement factor, differential gain and gain compression factor for different feedback configurations. It is also shown that, under the short external cavity configuration, the dynamic properties such as the relaxation frequency as well as the laser's bandwidth can be improved through controlled optical feedback. On the other hand, numerical results show that under the long external cavity configuration, any small back-reflection from the laser's facets combined with the large variations of linewidth enhancement factor would significantly alter the laser's modulation response
International audienceThe effect of external optical feedback on an InAs/GaAs quantum dot passively mode-locked laser is investigated. The rf linewidth narrows from 8 KHz in the free-running situation to a value as low as 350 Hz under relatively low feedback. The rf linewidth characterization under resonant feedback at a multiple of the laser cavity length validates the prediction of a previous numerical simulation. It is also confirmed that the integrated rms timing jitter varies as the square root of the rf linewidth. The results are promising for the development of compact, monolithic semiconductor mode-locked lasers as low noise optoelectronic oscillators
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