We report on the frictional force between an SiN tip and graphene/graphite surfaces using lateral force microscopy. The cantilever we have used was made of an SiN membrane and has a low stiffness of 0.006 N m(-1). We prepared graphene flakes on a Si wafer covered with silicon oxides. The frictional force on graphene was smaller than that on the Si oxide and larger than that on graphite (multilayer of graphene). Force spectroscopy was also employed to study the van der Waals force between the graphene and the tip. Judging that the van der Waals force was also in graphite-graphene-silicon oxide order, the friction is suspected to be related to the van der Waals interactions. As the normal force acting on the surface was much weaker than the attractive force, such as the van der Waals force, the friction was independent of the normal force strength. The velocity dependency of the friction showed a logarithmic behavior which was attributed to the thermally activated stick-slip effect.

Field emitter arrays with multiwall carbon nanotubes (CNTs) grown inside their gated holes were fabricated on glass substrates. The Fe–Ni–Co alloy catalyst dots on which the CNTs would be grown were deposited into the gated holes by a self-aligned method to maintain a constant distance between CNT emitters and gate electrodes. The CNTs were synthesized by thermal chemical vapor deposition using a gas mixture of CO and H2 at 500 °C. The CNT lengths were controlled by changing ratios of CO to H2. Field emission currents and images were monitored as a function of gate and anode voltages. It was shown that the CNT emitters grown just up to the gate electrode height operated best in a triode mode.

We developed a technique for transferring graphene and hexagonal boron nitride (hBN) in dry conditions for fabrication of van der Waals heterostructures. The graphene layer was encapsulated between two hBN layers so that it was kept intact during fabrication of the device. For comparison, we also fabricated the devices containing graphene on SiO2/Si wafer and graphene on hBN. Electrical properties of the devices were investigated at room temperature. The mobility of the graphene on SiO2 devices and graphene on hBN devices were 15,000 and 37,000 cm(2) V(-1) s(-1), respectively, while the mobility of the sandwich structure device reached the highest value of ∼100,000 cm(2) V(-1) s(-1), at room temperature. The electrical measurements of the samples were carried out in air and vacuum environments. We found that the electrical properties of the encapsulated graphene devices remained at a similar level both in a vacuum and in air, whereas the properties of the graphene without encapsulation were influenced by the external environment.

In this study, we investigated an energy harvesting effect of tensile stress using piezoelectric polymers and flexible electrodes. A chemical-vapor-deposition grown graphene film was transferred onto both sides of the PVDF and P(VDF-TrFE) films simultaneously by means of a conventional wet chemical method. Output voltage induced by sound waves was measured and analyzed when a mechanical tension was applied to the device. Another energy harvester was made with a metallic electrode, where Al and Ag were deposited by using an electron-beam evaporator. When acoustic vibrations (105 dB) were applied to the graphene/PVDF/graphene device, an induced voltage of 7.6 Vpp was measured with a tensile stress of 1.75 MPa, and this was increased up to 9.1 Vpp with a stress of 2.18 MPa for the metal/P(VDF-TrFE)/metal device. The 9 metal/PVDF/metal layers were stacked as an energy harvester, and tension was applied by using springs. Also, we fabricated a full-wave rectifying circuit to store the electrical energy in a 100 μF capacitor, and external vibration generated the electrical charges. As a result, the stored voltage at the capacitor, obtained from the harvester via a bridge diode rectifier, was saturated to ~7.04 V after 180 s charging time.

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