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Ga2O3 is expected to show similar radiation resistance to that of GaN and SiC. This is not enough to explain the orders of magnitude difference in the relative resistance to radiation damage of these materials compared to GaAs or why dynamic annealing of defects is much more effective in Ga2O3. Octahedral gallium monovacancies are the main defects produced under most radiation conditions because of the larger cross-section for interaction compared to oxygen vacancies. Proton irradiation introduces two main paramagnetic defects in Ga2O3, which are stable at room temperature. Charge carrier removal can be explained by Fermi-level pinning far from the conduction band minimum due to gallium interstitials, vacancies, and antisites. With few experimental or simulation studies on single event effects in Ga2O3 , it is apparent that while other wide bandgap semiconductors like SiC and GaN are robust against displacement damage and total ionizing dose, they display significant vulnerability to single event effects at high linear energy transfer and at much lower biases than expected. We have analyzed the transient response of β-Ga2O3 rectifiers to heavy-ion strikes via TCAD simulations. Using field metal rings improves the breakdown voltage and biasing those rings can help control the breakdown voltage.

Focused Ga+ ion milling of lightly Si-doped, n-type Ga2O3 was performed with 2–30 kV ions at normal incidence and beam currents that were a function of beam voltage, 65 nA for 30 kV, 26 nA for 10 kV, 13 nA for 5 kV, and 7.1 nA for 2 kV, to keep the milling depth constant at 100 nm. Approximate milling rates were 15, 6, 2.75, and 1.5  μm3/s for 30, 10, 5, and 2 kV, respectively. The electrical effects of the ion damage were characterized by Schottky barrier height and diode ideality factor on vertical rectifier structures comprising 10  μm epitaxial n-Ga2O3 on n+ Ga2O3 substrates, while the structural damage was imaged by transmission electron microscopy. The reverse bias leakage was largely unaffected even by milling at 30 kV beam energy, while the forward current-voltage characteristics showed significant deterioration at 5 kV, with an increase in the ideality factor from 1.25 to 2.25. The I–V characteristics no longer showed rectification for the 30 kV condition. Subsequent annealing up to 400 °C produced substantial recovery of the I–V characteristics for all beam energies and was sufficient to restore the initial ideality factor completely for beam energies up to 5 kV. Even the 30 kV-exposed rectifiers showed a recovery of the ideality factor to 1.8. The surface morphology of the ion-milled Ga2O3 was smooth even at 30 kV ion energy, with no evidence for preferential sputtering of the oxygen. The surface region was not amorphized by extended ion milling (35 min) at 5 kV with the samples held at 25 °C, as determined by electron diffraction patterns, and significant recovery of the lattice order was observed after annealing at 400 °C.

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Halide vapor phase epitaxial (HVPE) Ga2O3 films were grown on c-plane sapphire and diamond substrates at temperatures up to 550 °C without the use of a barrier dielectric layer to protect the diamond surface. Corundum phase α-Ga2O3 was grown on the sapphire substrates, whereas the growth on diamond resulted in regions of nanocrystalline β-Ga2O3 (nc-β-Ga2O3) when oxygen was present in the HVPE reactor only during film growth. X-ray diffraction confirmed the growth of α-Ga2O3 on sapphire but failed to detect any β-Ga2O3 reflections from the films grown on diamond. These films were further characterized via Raman spectroscopy, which revealed the β-Ga2O3 phase of these films. Transmission electron microscopy demonstrated the nanocrystalline character of these films. From cathodoluminescence spectra, three emission bands, UVL′, UVL, and BL, were observed for both the α-Ga2O3/sapphire and nc-Ga2O3/diamond, and these bands were centered at approximately 3.7, 3.2, and 2.7 eV.