ZnO/SiC heterojunctions show great potential for various optoelectronic applications (e.g., ultraviolet light emitting diodes, photodetectors, and solar cells). However, the lack of a detailed understanding of the ZnO/SiC interface prevents an efficient and rapid optimization of these devices. Here, intrinsic (but inherently n-type) ZnO were deposited via molecular beam epitaxy on n–type 6H-SiC single crystalline substrates. The chemical and electronic structure of the ZnO/SiC interfaces were characterized by ultraviolet/x-ray photoelectron spectroscopy and x-ray excited Auger electron spectroscopy. In contrast to the ZnO/SiC interface prepared by radio frequency magnetron sputtering, no willemite-like zinc silicate interface species is present at the MBE-ZnO/SiC interface. Furthermore, the valence band offset at the abrupt ZnO/SiC interface is experimentally determined to be (1.2 ± 0.3) eV, suggesting a conduction band offset of approximately 0.8 eV, thus explaining the reported excellent rectifying characteristics of isotype ZnO/SiC heterojunctions. These insights lead to a better comprehension of the ZnO/SiC interface and show that the choice of deposition route might offer a powerful means to tailor the chemical and electronic structures of the ZnO/SiC interface, which can eventually be utilized to optimize related devices.

ZnO layers were deposited on 6H-SiC single crystalline wafers by radio frequency magnetron sputtering. The chemical structure of the ZnO/SiC interface was studied by x-ray photoelectron and x-ray excited Auger electron spectroscopy. A complex chemical structure, involving not only silicon–carbon and zinc–oxygen bonds but also silicon–oxygen and zinc–silicon–oxygen bonds was revealed to form at the ZnO/SiC interface. Based on the comparison with the presumably inert (i.e. chemically abrupt) ZnO/Mo interface, it was concluded that a willemite-like zinc silicate (i.e. Zn2SiO4) interface species develops between ZnO and SiC. The presence of this species at the ZnO/SiC interface will affect the electronic structure of the heterojunction and thus needs to be considered for device optimization.