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Surface and interface phonon polariton characteristics of wurtzite ZnO/GaN heterostructure Appl. Phys. Lett. 98, 241909 (2011); 10.1063/1.3599715The lifetime of optical phonons in a single heterostructure Simple analytical expressions are derived, herein, for the interface phonon modes of complex SiCand GaN-based substrates. These analytical results are essential for studies of remote polar-optical phonon phenomena in a variety of structures including heterostructures, in two-dimensional (2D) structures such and graphene, BN, and MoS 2 on polar substrates, as well as in efforts to control the bandgaps of such 2D structures through interactions with polar substrates. V C 2013 AIP Publishing LLC.

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Coherent interface phonon generation by surface plasmon in silver-SiO2-silicon system is analyzed, based on the impulsive stimulated scattering theory model. The surface plasmon is first analyzed, and applied to semiclassical stimulated Raman scattering theory. Our calculatation shows that the photon-induced surface plasmons store about 20-30% of the total incoming energy, and it is considered in the analysis. Phonon potential of the generated phonons is also calculated.

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