Thin film transistors were fabricated using polycrystalline silicon (poly-Si) film which were directly deposited on Corning 7059 glass substrates by plasma chemical vapor deposition method at very low temperature of 450°C. No annealing procedure was carried out in the fabrication process. The dependences of the crystallinity and the electrical properties on the poly-Si film thickness were investigated for three kinds of films deposited under different conditions. These dependences on the film thickness were found to be strongly influenced by the deposition condition, especially the reaction gas pressure. By choosing optimum poly-Si deposition condition carefully, high performance TFTs have been fabricated by this novel method.

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