Abstract. Plasma route to nanofabrication has drawn much attention recently. The dense plasma focus (DPF) device is used for depositing aluminium nanoparticles on n-type Si (111) wafer. The plasma chamber is filled with argon gas and evacuated at a pressure of 80 Pa. The substrate is placed at distances 4.0 cm, 5.0 cm and 6.0 cm from the top of the central anode. The aluminium is deposited on Si wafer at room temperature with two focused DPF shots. The deposits on the substrate are examined for their morphological properties using atomic force microscopy (AFM). The AFM images have shown the formation of aluminium nanoparticles. From the AFM images, it is found that the size of aluminium nanoparticles increases with increase in distance between the top of anode and the substrate for same number of DPF shots. IntroductionAluminium is an important material for making contacts in silicon technology for its ability to make both ohmic and Schottky contacts [1]. It is possible to make ohmic contact by making the metal contacts to p-type regions and heavily doped n-type silicon regions and rectifying contact to lightly doped n-type silicon regions. The need for low temperature processing and low resistive material in IC technology has made this simple metal contacts widely used in large scale integration (LSI) and also in early stage of the very large scale integration (VLSI) in recent times. Nanostructures like aluminium silicon nanowire networks have also been fabricated on glass and Si substrates by dealloying an Al-Si thin film through selective chemical etching [2] in order to miniaturize and make power efficient devices. Nanowire can act as electron confinement structure. When it is coupled with appropriate self configuring computer control architecture it would enable realization of self assembled ultrahigh density electronic device. So, metallic contacts of atomic dimensions have been a subject of interest in recent times. Plasma aided nanofabrication [3][4][5][6] has been considered widely for material deposition. Many techniques such as ionized cluster beam (ICB), partially ionized beam (PIB) [7], electron beam evaporation [8], magnetron sputtering [9], pulsed microarc discharge [10] techniques have been employed to deposit aluminium on different substrates. ICB technique has a limitation that the requirement of using a small nozzle of the order of 1-2 mm for supersonic
Background: Micro-surface treatment is claimed to improve cell adhesion and enhance osseointegration. The retainability of the micro-surface treatment post-implantation needs to be assessed. Purpose: The purpose of the study was to estimate the post-implantation changes in the surface topography of different implant surfaces created by the subtractive methods. Material and Methods: Twelve patients aged between 22-45 years participated in the study. 3 different implant systems; MTX surface with hydroxyapatite grit blasting, Microgrip with sandblasting and DPS surface with alumina grit blasting were utilized. The test implants were placed with a torque of 35-40 N and retrieved immediately after placement, followed by placement of a larger diameter implant for delayed loading protocol. The surface topography of the retrieved implant surfaces was examined using a scanning electron microscope (SEM)(stereo scan 440) at high magnification (2000 nm). Results: The post-implantation SEM image exhibited altered surface topography that varied between the different implant surface textures. Conclusions: The surface topography varied between different implants based on the types of surface treatments. The sandblasting with acid etchin had better retention of surface topography post-implantation when compared to the other surface treatments. Clinical implication: Torquing of an implant affects the surface topography and it varied for different implant surface treatments without affecting the osseointegration.
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