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The electron affinity difference AEc = Xl -;t2, in CdS/CdTe solar cells fabricated by four different processes has been measured from observations of the variations of open voltages with temperature. For CdS/CdTe cells, the values of AEc lie between 0.20 and 0.25 eV and are found to be independent of the process of cell fabrication. The use of CdZnTe in place of CdTe increases the value of AEc to 0.49 eV. The method used for the measurement of AE~ is very simple. The values of the saturation current Io for the different types of cells have been estimated from the slopes of qVo~ versus kT plots and compared with those obtained from lnI versus V curves. The values of I0 found for each cell by the two methods are in substantial agreement.

Double exposure holographic technique is used for mapping the surface temperature distribut?.ons of an integrated circuit chip.The same results are obtained from the solution of Poisson's equation in two-dimensions to simulate these thermal fields.

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Different computational techniques were used to simulate thermal characteristics of nodal points on substrate chips. Multiple distributed thermal disturbances were investigated through thermal resistance calculations among the substrate surface. The simulated results for multiple heat sources are similar to those experimented.