Verification of two linearization methods, applied on asymmetrical two-way
microstrip Doherty amplifier in experiment and on symmetrical two-way
Doherty amplifier in simulation, is performed in this paper. The laboratory
set-ups are formed to generate the baseband nonlinear linearization signals
of the second-order. After being tuned in magnitude and phase in the digital
domain the linearization signals modulate the second harmonics of
fundamental carrier. In the first method, adequately processed signals are
then inserted at the input and output of the main Doherty amplifier
transistor, whereas in the second method, they are injected at the outputs
of the Doherty main and auxiliary amplifier transistors. The experimental
results are obtained for 64QAM digitally modulated signals. As a proof of
concept, the linearization methods are also verified in simulation, for
Doherty amplifier designed to work in 5G band below 6 GHz, utilizing 20 MHz
LTE signal.
A simple procedure for extraction the intrinsic noise wave temperatures in the wave representations of microwave transistors is presented in this paper. A set of equation describing the noise parameters as the function of three equivalent noise temperatures is implemented within the circuit simulator Libra. After that, the wave noise model is defined as new user-defined element of program Libra library. Good agreement between modeled and measured noise parameters is observed.
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