In this study, the electroless deposition of copper and silver was investigated on epoxy and silicon dioxide-based substrates. A cost-efficient, Sn/Ag catalyst was investigated as a replacement for the Sn/Pd catalyst currently used in board technology. The surface of the epoxy based polyhedral oligomeric silsesquioxane (POSS) films was modified by plasma and chemical etching for electroless activation without the creation of a roughened surface. The electroless copper deposited on the modified POSS surface exhibited excellent adhesion when annealed at 180 • C in nitrogen for 90 min or at room temperature for 24 hr. Electroless copper deposition was also demonstrated on oxidized silicon wafers for through silicon via sidewall deposition.

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A photodefinable dielectric was developed using epoxycyclohexyl polyhedral oligomeric silsesquioxanes (POSS) and a photocatalyst. POSS is a hybrid organic/inorganic dielectric which has favorable mechanical and chemical stability for use as a permanent dielectric in microfabrication. Sharp, 10 lm wide features were formed from POSS using 365 nm radiation. The optical contrast was 1.51. POSS films were thermally stable to 350°C and demonstrated chemical stability in a variety of solvents and oxidants. The polymer film had an elastic modulus of 5.3 GPa and a hardness of 0.64 GPa. The POSS had high etch selectivity compared with organic films for pattern transfer.

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