No abstract

Supercapacitors represent an important strategy for electrochemical energy storage, but are usually limited by relatively low energy density. Here we report a three-dimensional holey graphene framework with a hierarchical porous structure as a high-performance binder-free supercapacitor electrode. With large ion-accessible surface area, efficient electron and ion transport pathways as well as a high packing density, the holey graphene framework electrode can deliver a gravimetric capacitance of 298 F g À 1 and a volumetric capacitance of 212 F cm À 3 in organic electrolyte. Furthermore, we show that a fully packaged device stack can deliver gravimetric and volumetric energy densities of 35 Wh kg À 1 and 49 Wh l À 1 , respectively, approaching those of lead acid batteries. The achievement of such high energy density bridges the gap between traditional supercapacitors and batteries, and can open up exciting opportunities for mobile power supply in diverse applications.

Graphene, a single layer of carbon atoms in a honeycomb lattice, offers a number of fundamentally superior qualities that make it a promising material for a wide range of applications, particularly in electronic devices. Its unique form factor and exceptional physical properties have the potential to enable an entirely new generation of technologies beyond the limits of conventional materials. The extraordinarily high carrier mobility and saturation velocity can enable a fast switching speed for radio-frequency analog circuits. Unadulterated graphene is a semi-metal, incapable of a true off-state, which typically precludes its applications in digital logic electronics without bandgap engineering. The versatility of graphene-based devices goes beyond conventional transistor circuits and includes flexible and transparent electronics, optoelectronics, sensors, electromechanical systems, and energy technologies. Many challenges remain before this relatively new material becomes commercially viable, but laboratory prototypes have already shown the numerous advantages and novel functionality that graphene provides.

Two-dimensional layered semiconductors such as molybdenum disulfide (MoS2) have attracted tremendous interest as a new class of electronic materials. However, there are considerable challenges in making reliable contacts to these atomically thin materials. Here we present a new strategy by using graphene as the back electrodes to achieve ohmic contact to MoS2. With a finite density of states, the Fermi level of graphene can be readily tuned by a gate potential to enable a nearly perfect band alignment with MoS2. We demonstrate for the first time a transparent contact to MoS2 with zero contact barrier and linear output behavior at cryogenic temperatures (down to 1.9 K) for both monolayer and multilayer MoS2. Benefiting from the barrier-free transparent contacts, we show that a metal-insulator transition can be observed in a two-terminal MoS2 device, a phenomenon that could be easily masked by Schottky barriers found in conventional metal-contacted MoS2 devices. With further passivation by boron nitride (BN) encapsulation, we demonstrate a record-high extrinsic (two-terminal) field effect mobility up to 1300 cm(2)/(V s) in MoS2 at low temperature.