Tin oxide thin films were deposited by direct current (DC) reactive sputtering at gas pressures of 0.015 mbar-0.15 mbar. The crystalline structure and surface morphology of the prepared SnO 2 films were introduced by X-ray diffraction (XRD) and atomic force microscopy (AFM). These films showed preferred orientation in the (110) plane. Due to AFM micrographs, the grain size increased non-uniformly as the working gas pressure increased.
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