Continues transistor scaling, exacerbates the situation, as susceptibility to soft-errors is increased in VLSI circuits, particularly when exposed to severe environmental conditions, such as cosmic radiation and charged particles .Silicon covers most of the area in the memory arrays and regularly stores the basic information. Radiation solidifying of inserted memory arrays is normally accomplished by actualizing incredibly expansive bit cells and keeping up a moderately high operating voltage; however, in addition to the resulting area overhead, this often limits the minimum operating voltage of the entire system leading to significant power consumption.In this paper, we propose a radiation-solidified static random access memory (SRAM) bitcell focused at low-voltage usefulness, while keeping up high soft-error robustness. The proposed 4T SRAM bit cell have a novel dual-driven seperated feedback mechanism to achieve high soft-error tolerance robust operation down to 300 mV.