Study of defects in a semiconducting material can help in improving the electrical and optical properties of a device based on such material. There is a general paucity of knowledge about the nature and origin of deep level defects in ternary and quaternary semiconductors in literature. It is, therefore, of interest to study defects in ternary semiconductor, InGaN-based, LEDs. By employing deep level transient spectroscopy (DLTS), at least nine defects, labeled, E1 ˗ E9 have been observed in InGaN-LEDs. Of these, seven defects E2 ˗ E8 have been characterized. Respective energy states induced by the defects within the band gap are found to be 0.61, 1.00, 1.24, 1.37, 1.46, 1.68, 2.25 eV and capture cross-sections, at infinite temperature, are 2.27×10-17 , 4.39×10-29 , 1.37×10-20 , 9.58×10-22 , 4.61×10-28 , 2.19×10-24 and 8.23×10-22 cm 2. Concentrations of the defects were estimated to be 4.6×10 4 , 2.7×10 4 , 19.2×10 4 , 6.9×10 4 , 6.9×10 4 , 5.9×10 4 and 6.3×10 4 (cm 3), respectively.

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