In this work, the main electronic parameters of the performed Al-(CdxZn1-xO)-pSi Metal/İnterface-layer/Semiconductor (MIS) type Schotty Diodes (SDs) have been investigated by utilizing IV characteristics at 300 K. The (CdxZn1-xO) interfacial layer was enlarged on the pSi wafer by utilizing sol-gel technique. Ideality-factor(n), potential barrier Фbo, Rs, shunt resistances (Rsh) and rectification rate (RR) (Iforward/Ireverse) values have been calculated based on thermionic emission (TE) theory and Cheung function between -5V and 5V and they changed for 0.1, 0.2, and 0.3 Cd doped interfacial layer. Energy-dependent profiles of them were also extracted from the forward bias IV data and their magnitude was found as 1012eV-1.cm-2 order which are very appropriate for the MIS type SD. The values of n, barrier height (BH), Фbo, and RR were changed from the 4.347, 0.582 eV, 5.74x103 to 5.293, 0.607 eV, 2.83x106, These results show that electronic parameters of these SDs are strong function of voltage, calculated method, and the dopand rate of Cadminium (Cd) interfacial layer and the best one rate is the 30% Cd:ZnO. Thus such an interfacial layer may be used instead of traditional insulator layers and increase the quality of Metal/Semiconductor (MS) type SDs. .