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This paper proposes a technique to reduce capacitance spread in switched-capacitor filters. The proposed technique is based on a simple charge distribution and a partial charge transfer techniques, and is applicable to various integrator topologies. Simulation results show that the proposed technique reduces the total capacitance by 70%, which is a significant reduction of filter area. Furthermore, an integrator implemented by the proposed technique is found to be insensitive to parasitic capacitances.

In this paper, gain bandwidth limitations of a regularly processed 0.18µ µ µ µm Si CMOS FET is investigated over the frequency band of 450MHz-10GHz. It is exhibited that 0.18µ µ µ µm Si CMOS processing technology can safely be utilized to manufacture Ultra Wideband RF-Amplifiers for commercial wireless communication systems placed silicon chips up to X-Band.I.

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