Tuning the intrinsic structural and stoichiometric properties by different means is used for increasing the green energy production efficiency of complex oxide materials. Here, we report on the formation of self-assembled nanodomains and their effects on the photoelectrochemical (PEC) properties of LaFeO3 (LFO) epitaxial thin films as a function of layer’s thickness. The variation with the film’s thickness of the structural parameters such as in-plane and out-of-plane crystalline coherence length and the coexistence of different epitaxial orientation—<100>SrTiO3//<001> LFO, <100>SrTiO3//<110> LFO and [110] LFO//[010] STO, as well as the appearance of self-assembled nanodomains for film’s thicknesses higher than 14 nm, is presented. LFO thin films exhibit different epitaxial orientations depending on their thickness, and the appearance of self-assembled nanopyramids-like domains after a thickness threshold value has proven to have a detrimental effect on the PEC functional properties. Using Nb:SrTiO3 as conductive substrate and 0.5 M NaOH aqueous solution for PEC measurements, the dependence of the photocurrent density and the onset potential vs. RHE on the structural and stoichiometric features exhibited by the LFO photoelectrodes are unveiled by the X-ray diffraction, high-resolution transmission electron microscopy, ellipsometry, and Rutherford backscattering spectroscopy results. The potentiodynamic PEC analysis has revealed the highest photocurrent density Jphotocurrent values (up to 1.2 mA/cm2) with excellent stability over time, for the thinnest LFO/Nb:SrTiO3 sample, both cathodic and anodic behavior being noticed. Noticeably, the LFO thin film shows unbiased hydrogen evolution from water, as determined by gas chromatography in aqueous 0.5 M NaOH solution under constant illumination.

The response of resistive In2O3−x sensing devices was investigated as a function of the NO2 concentration in different operative conditions. Sensing layers are 150 nm thick films manufactured by oxygen-free room temperature magnetron sputtering deposition. This technique allows for a facile and fast manufacturing process, at same time providing advantages in terms of gas sensing performances. The oxygen deficiency during growth provides high densities of oxygen vacancies, both on the surface, where they are favoring NO2 absorption reactions, and in the bulk, where they act as donors. This n-type doping allows for conveniently lowering the thin film resistivity, thus avoiding the sophisticated electronic readout required in the case of very high resistance sensing layers. The semiconductor layer was characterized in terms of morphology, composition and electronic properties. The sensor baseline resistance is in the order of kilohms and exhibits remarkable performances with respect to gas sensitivity. The sensor response to NO2 was studied experimentally both in oxygen-rich and oxygen-free atmospheres for different NO2 concentrations and working temperatures. Experimental tests revealed a response of 32%/ppm at 10 ppm NO2 and response times of approximately 2 min at an optimal working temperature of 200 °C. The obtained performance is in line with the requirements of a realistic application scenario, such as in plant condition monitoring.