Ferroelectric switching is unambiguously demonstrated for the first time in a III-V semiconductor based material: Al1-xScxN -A discovery which could help to satisfy the urgent demand for thin film ferroelectrics with high performance and good technological compatibility with generic semiconductor technology which arises from a multitude of memory, micro/nano-actuator and emerging applications based on controlling electrical polarization. The appearance of ferroelectricity in Al1-xScxN can be related to the continuous distortion of the original wurtzite-type crystal structure towards a layered-hexagonal structure with increasing Sc content and tensile strain, which is expected to be extendable to other III-nitride based solid solutions. Coercive fields which are systematically adjustable by more than 3 MV/cm, high remnant polarizations in excess of 100 µC/cm² which constitute the first experimental estimate of the previously inaccessible spontaneous polarization in a IIInitride based material, an almost ideally square-like hysteresis resulting in excellent piezoelectric linearity over a wide strain interval from -0.3% to +0.4% as well as a 2 paraelectric transition temperature in excess of 600°C are confirmed. This intriguing combination of properties is to our knowledge as of now unprecedented in the field of polycrystalline ferroelectric thin films and promises to significantly advance the commencing integration of ferroelectric functionality to micro-and nanotechnology, while at the same time providing substantial insight to one of the central open questions of the III-nitride semiconductors -that of their actual spontaneous polarization.

Development of high‐performance p‐type semiconductor based gas sensors exhibiting fast‐response/recovery times with ultra‐high response are of major importance for gas sensing applications. Recent reports demonstrated the excellent properties of p‐type semiconducting oxide for various practical applications, especially for selective oxidation of volatile organic compounds (VOCs). In this work, sensors based on CuO nanowire (NW) networks have been successfully fabricated via a simple thermal oxidation process on pre‐patterned Au/Cr pads. Our investigation demonstrates high impact of the process temperature on aspect ratio and density of copper oxide NWs. An optimal temperature for growth of thin and densely packed NWs was found to be at 425 °C. The fabricated sensors demonstrated ultra‐high gas response by a factor of 313 to ethanol vapour (100 ppm) at an operating temperature of 250 °C. High stability and repeatability of these sensors indicate the efficiency of p‐type oxide based gas sensors for selective detection of VOCs. A high‐performance nanodevice was fabricated in a FIB‐SEM system using a single CuO NW, demonstrating an ethanol response of 202 and rapid response and recovery of ∼198 ms at room temperature. The involved gas sensing mechanism of CuO NW networks has been described. We consider that the presented results will be of a great interest for the development of higher‐performance p‐type semiconductor based sensors and bottom‐up nanotechnologies. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)

Noble metals and their oxide nano-clusters are considered to be the most promising candidates for fabricating advanced H gas sensors. Through this work, we propose a novel strategy to grow and modulate the density of PdO/PdO nanoparticles uniformly on nanostructured Pd-doped ZnO (ZnO : Pd) films by a one-step solution approach followed by thermal annealing at 650 °C, and thus to detect ppm-level H gas in a selective manner. The gas sensing properties of such hybridized materials showed that the PdO-functionalized ZnO samples offer significantly improved H gas sensing properties in an operating temperature range of 25-200 °C. The deposition of ZnO : Pd films via a simple synthesis from chemical solutions (SCS) approach with an aqueous bath (at relatively low temperatures, <95 °C) is reported. Furthermore, the functionalization of palladium oxide nanoclusters by a simple but highly effective approach on ZnO : Pd film surfaces was performed and is reported here for the first time. The morphological, structural, vibrational, optical, chemical, and electronic properties were studied in detail and the mixed phases of palladium oxide nanoclusters on the ZnO surface were found. Sensor studies of the ZnO : Pd samples (in the range of 25-350 °C operating temperature) showed good selectivity to H gas, especially in the range of higher temperatures (>150 °C, up to 350 °C); however, the PdO/PdO mixed phases of the nanocluster-modified surface ZnO : Pd films showed a much better selectivity to H gas, even at a lower operating temperature, in the range of 25-150 °C. For such PdO-functionalized ZnO : Pd films, even at room temperature, a gas response of ∼12.7 to 1000 ppm of H gas was obtained, without response to any other reducing gases or tested vapors. The large recovery time of the samples at room temperatures (>500 s) can be drastically reduced by applying higher bias voltages. Furthermore, we propose and discuss the gas sensing mechanism for these structures in detail. Our study demonstrates that surface functionalization with PdO/PdO mixed phase nanoclusters-nanoparticles (NPs) is much more effective than only the Pd doping of nanostructured ZnO films for selective sensing applications. This approach will pave a new way for the controlled functionalization of PdO/PdO nanoclusters on ZnO : Pd surfaces to the exact detection of highly explosive H gas under various atmospheres by using solid state gas sensors.

Enhancing the piezoelectric activity of AlN by partially substituting Al with Sc to form Al1–xScxN is a promising approach to improve the performance of piezoelectric micro-electromechanical systems. Here, we present evidence of an instability in the morphology of Al1–xScxN, which originates at, or close to, the substrate/Al1–xScxN interface and becomes more pronounced as the Sc content is increased. Based on Transmission electron microscopy, piezoresponse force microscopy, X-ray diffraction, and SEM analysis, it is identified to be the incipient formation of (100) oriented grains. Approaches to successfully reestablish exclusive c-axis orientation up to x = 0.43 are revealed, with electrode pre-treatment and cathode-substrate distance found to exert significant influence. This allows us to present first measurements of the transversal thin film piezoelectric coefficient e31,f and dielectric loss tangent tan δ beyond x = 0.3.

A composed morphology of iron oxide microstructures covered with very thin nanowires (NWs) with diameter of 15-50 nm has been presented. By oxidizing metallic Fe microparticles at 255 °C for 12 and 24 h, dense iron oxide NW networks bridging prepatterned Au/Cr pads are obtained. X-ray photoelectron spectroscopy studies reveal formation of α-Fe O and Fe O on the surface and it is confirmed by detailed high-resolution transmission electron microscopy and selected area electron diffraction (SAED) investigations that NWs are single phase α-Fe O and some domains of single phase Fe O . Localized synthesis of such nano- and microparticles directly on sensor platform/structure at 255 °C for 24 h and reoxidation at 650 °C for 0.2-2 h, yield in highly performance and reliable detection of acetone vapor with fast response and recovery times. First nanosensors on a single α-Fe O nanowire are fabricated and studied showing excellent performances and an increase in acetone response by decrease of their diameter was developed. The facile technological approach enables this nanomaterial as candidate for a range of applications in the field of nanoelectronics such as nanosensors and biomedicine devices, especially for breath analysis in the treatment of diabetes patients.