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Tuning the electronic properties of graphene by doping atoms into its lattice makes it more applicable for electronic devices. We present a study of nitrogen doped graphene samples grown using chemical vapor deposition with a variety of synthesis conditions. Soft X-ray absorption and emission spectroscopy, which are techniques sensitive to the unoccupied and occupied partial electronic density of states, respectively, were used to study the electronic structure of N-doped graphene. Complementary fullpotential, all-electron density functional theory calculations of the measured spectra reveal the existence of graphitic, pyridinic and nitrilic-like sites in the samples studied. Although our study shows that the defect type is sensitively related to the synthesis conditions, the graphitic configuration is found to be the most dominant one in each system studied. The dependence of the defect type on the sample growth conditions and the corresponding shifts in the Fermi energy level from the Dirac point, result in n-or p-type material being obtained.

The effects of ultra high frequency (UHF) nonionizing electromagnetic fields (EMF) on the channel activities of nanopore forming protein, OmpF porin, were investigated. The voltage clamp technique was used to study the single channel activity of the pore in an artificial bilayer in the presence and absence of the electromagnetic fields at 910 to 990 MHz in real time. Channel activity patterns were used to address the effect of EMF on the dynamic, arrangement and dielectric properties of water molecules, as well as on the hydration state and arrangements of side chains lining the channel barrel. Based on the varied voltage sensitivity of the channel at different temperatures in the presence and absence of EMF, the amount of energy transferred to nano-environments of accessible groups was estimated to address the possible thermal effects of EMF. Our results show that the effects of EMF on channel activities are frequency dependent, with a maximum effect at 930 MHz. The frequency of channel gating and the voltage sensitivity is increased when the channel is exposed to EMF, while its conductance remains unchanged at all frequencies applied. We have not identified any changes in the capacitance and permeability of membrane in the presence of EMF. The effect of the EMF irradiated by cell phones is measured by Specific Absorption Rate (SAR) in artificial model of human head, Phantom. Thus, current approach applied to biological molecules and electrolytes might be considered as complement to evaluate safety of irradiating sources on biological matter at molecular level.

Melzak and Wall’s gate control theory proposed that innocuous input into the dorsal horn of the spinal cord represses pain-inducing nociceptive input. Here we show that input from proprioceptive parvalbumin-expressing sensory neurons tonically represses nociceptor activation within dorsal root ganglia. Deletion of parvalbumin-positive sensory neurons leads to enhanced nociceptor activity measured with GCaMP3, increased input into wide dynamic range neurons of the spinal cord and increased acute and spontaneous pain behaviour, as well as potentiated innocuous sensation. Parvalbumin-positive sensory neurons express the enzymes and transporters necessary to produce vesicular GABA that is known to be released from depolarized somata. These observations support the view that gate control mechanisms occur peripherally within dorsal root ganglia.