No abstract

The first TiO2-based memristor was implemented in 2008 by HP company in Nano-scale to present the predictable behavior of the memristor and voltage-current (V-I) hysteresis curve. Many aspects of this device are unknown yet and having an accurate model can help to control the voltage and current of this device. For this purpose, some of electronic-based soft wares can help like PSPICE or Workbench. This paper is modeling the resistive behavior of this component with non-linear ionic deviance of the TiO2 by simple codes in MATLAB to be controlled by voltage or current. Some of the simulation results are presented with model adjustments for the specifications of this component.

Memristor is the fourth fundamental element that was theoretically discovered about 40 years ago by Professor Leon Chua and was introduced alongside three other existing elements (resistor, capacitor and inductor) in the electronic world. Until recently, however, the construction of a physical example of this had not yet taken place. Finally, in 2008, HP introduced a nanometer-sized TiO2 structure with predictable memory behavior and hysteresis. In this paper, after introducing the general characteristics and structure of the memristor, a 3D MATLAB model with nonlinear ion deflection for the titanium dioxide memristor made by HP with current or voltage control capability is presented. By setting the model parameters for the specifications of this memory, some simulations are performed and the results are displayed.

This study presents the effects of the vibration and thermal cycling on the fatigue life of a power Metal Oxide Semiconductor Field Effect Transistor (MOSFET) in a power converter circuit. The fatigue mechanism in per loading mode was investigated separately and based on the overlap approach, the synchronous effects were analyzed. The solder creeps' attitudes are depended on the fatigue life for the thermal loops. The success of the deposited strain per thermal loop is in direct relation with the fatigue lifetime. The main source of the stress in the packaging process is the differences between the components' thermal coefficients. To evaluate the effects of the vibration on the fatigue life for the solder layers, the RMS value of the peeling stress was considered. According to the results, the maximum stress and main affected points realized at the corners of the layers. It has been identified that the assembling of the thermal effects and mechanical loads are quickened the failure rate at the solder joints for this device. The Finite Element Method (FEM) is used for the simulation and the results confirm the estimated crack formation places in the layers.INDEX TERMS Solder joints, power MOSFET, fatigue life, finite element method (FEM). I. INTRODUCTIONPower electronics applications and designs widely are expanding based on their inevitable role in Renewable Energy Sources (RESs), industries and aerospace implementations to transmit the power to the load side [1], [2]. In recent years, many comprehensive studies are presented for DC-DC power boost converters that are the main structure between the RESs and load sides. These converters are including the power components like diode and switches. For high frequency and efficient circuits normally power MOSFETs are selected [3]-[6].The associate editor coordinating the review of this manuscript and approving it for publication was Francesco Della Corte .

No abstract